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| Schottky Barrier Diodes (SBD) MA2S728 Silicon epitaxial planar type Unit : mm 0.30 0.05 For switching circuits I Features * Super-small SS-mini type 2-pin package * Allowing high-density mounting * Low forward rise voltage (VF) and satisfactory wave detection efficiency () * Small temperature coefficient of forward characteristic * Extremely low reverse current IR 2 1 0.01 0.01 0.12 - 0.02 + 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 -55 to +125 Unit V V mA mA C C 0 - 0.05 +0 1.20 - 0.03 + 0.05 1.60 0.05 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: B I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k , CL = 10 pF 1.5 1 Conditions Min Typ Max 300 0.4 1 Unit nA V V pF ns Detection efficiency 65 0.60 - 0.03 + 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.80 - 0.03 + 0.05 1 MA2S728 IF V F 103 Schottky Barrier Diodes (SBD) VF Ta 1.6 1.4 102 103 IR VR 102 75C 25C Forward current IF (mA) Forward voltage VF (V) Ta = 125C 10 - 20C 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 1 mA Reverse current IR (A) Ta = 125C 10 75C IF = 30 mA 1 1 10-1 10-1 25C 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 3.0 1 000 IR T a 1 000 300 IF(surge) tW Ta = 25C IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 Terminal capacitance Ct (pF) 2.5 100 Reverse current IR (A) VR = 30 V 10 V 1V 2.0 10 1.5 1 1.0 0.5 0.1 0 0 5 10 15 20 25 30 0.01 -40 Forward surge current IF(surge) (A) 0 40 80 120 160 200 0.1 0.3 1 3 10 30 Reverse voltage VR (V) Ambient temperature Ta (C) Pulse width tW (ms) 2 |
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